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Infineon Technologies
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IPD16CNE8N G

Manufacturer Part Number:
IPD16CNE8N G
Manufacturer / Brand
Infineon Technologies
Part of Description:
MOSFET N-CH 85V 53A TO252-3
Datasheets:
IPD16CNE8N G(1).pdfIPD16CNE8N G(2).pdfIPD16CNE8N G(3).pdf
Lead Free Status / RoHS Status:
Stock Condition:
New original, Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number IPD16CNE8N G
Manufacturer / Brand Infineon Technologies
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 85V 53A TO252-3
Lead Free Status / RoHS Status: RoHS Compliant
Vgs(th) (Max) @ Id 4V @ 61µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 16mOhm @ 53A, 10V
Power Dissipation (Max) 100W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3230 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Base Product Number IPD16C

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



IPD16CNE8N G Product Details:

IPD16CNE8N G: A Comprehensive Review of the Versatile MOSFET Transistor MOSFET transistors are widely used in electronic devices and industries due to their excellent performance in current switching and amplification. Among them, the IPD16CNE8N G transistor stands out as a reliable and high-quality product with outstanding features and parameters. In this article, we will explore the main features and application scenarios of IPD16CNE8N G, as well as its manufacturing and testing processes. By the end of this article, you will have gained comprehensive knowledge of this MOSFET transistor's essential properties. IPD16CNE8N G: Main Features and Performance Parameters As a discrete semiconductor product, IPD16CNE8N G belongs to the MOSFET single type of transistors. Its primary features include a 60V voltage rating, a 16A continuous drain current, and a low RDS(on) value. These excellent properties make it an ideal choice for various electronic devices and applications, such as power supply, motor control, and lighting systems. The product's accuracy and efficiency are also impressive, with a typical on-resistance of 8.7mOhm and a minimum gate threshold voltage of 2V. Besides, its temperature range of -55°C to 175°C makes it suitable for use in extreme environments. IPD16CNE8N G: Application Scenarios and Usage IPD16CNE8N G is versatile in its usage and can be applied to many electronic devices and industries. Its high power density and low gate charge make it suitable for power conversion and high-current switching applications. Moreover, it is widely used in applications that require low capacitance and fast switching, such as DC-DC converters, LED lighting, and motor control. Some other scenarios where IPD16CNE8N G can come in handy include power tools, automotive systems, and solar inverters. Different Types of Integrated Circuits Integrated circuits are essential components in electronic devices and industries. They can be classified into digital, analog, mixed signal, and RF types, depending on their area of application and functionality. Digital ICs are used in digital systems and are either based on transistor-transistor logic (TTL) or complementary metal-oxide-semiconductor (CMOS) technology. Analog ICs, on the other hand, deal with continuous signals and are used in systems that require precise voltage and current control. Mixed signal ICs combine both digital and analog functionalities and are widely used in data acquisition, sensors, and control systems. Lastly, RF ICs deal with high-frequency signals and are found in communication systems and devices. IPD16CNE8N G: Complex Manufacturing Process The production of IPD16CNE8N G involves several complex steps, from chip design to finished product testing. First, the chip undergoes cutting and cleaning, followed by laser processing for the thinning of the wafer. The back grinding and doping process then follow to enhance the transistor's properties, after which the wafer is exposed and undergoes vapor deposition and etching. Finally, the wafer is cut into individual dies and packaged. Finished Product Testing After the manufacturing process, the final product undergoes testing to ensure its quality and performance. The testing process involves various procedures such as electrical testing, visual inspection, and thermal imaging. The component is connected to a test board, and its performance parameters, such as voltage-current characteristics and on-resistance, are analyzed. Any deviations from the desired standards are resolved, and the product undergoes final packaging. Conclusion IPD16CNE8N G is a MOSFET transistor that boasts impressive features and performance parameters, making it suitable for a range of electronic devices and applications. Its complex manufacturing process and stringent testing standards make it a reliable and high-quality product. In summary, we have explored IPD16CNE8N G's main features, application scenarios, different types of integrated circuits, and manufacturing and testing procedures. By choosing IPD16CNE8N G, you are getting a reliable and high-quality MOSFET transistor for all your electronic needs.

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